IRLU7821PBF Infineon Technologies
Артикул
IRLU7821PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 65A I-PAK, N-Channel 30 V 65A (Tc) 75W (Tc) Through Hole I-PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLU7821PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
75W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
*IRLU7821PBF,SP001568646
Mounting Type
Through Hole
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Vgs (Max)
±20V
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