SPD03N60C3BTMA1 Infineon Technologies
Артикул
SPD03N60C3BTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 3.2A DPAK, N-Channel 650 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11
Цена
303 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD03N60C3BTMA1.jpg
Supplier Device Package
PG-TO252-3-11
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
3.2A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPD03N60C3INTR-NDR,SPD03N60C3T,SPD03N60C3INDKR,SPD03N60C3XTINTR-ND,SPD03N60C3XTINCT-ND,SPD03N60C3INTR,SPD03N60C3INDKR-NDR,SPD03N60C3INCT-NDR,SPD03N60C3INDKR-ND,SPD03N60C3BTMA1TR,SPD03N60C3BTMA1DKR,SPD03N60C3INCT,SPD03N60C3XTINCT,SPD03N60C3,SPD03N60C3XT,SP
Standard Package
2,500
Mounting Type
Surface Mount
Power Dissipation (Max)
38W (Tc)
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