SPD06N60C3ATMA1 Infineon Technologies
Артикул
SPD06N60C3ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 6.2A TO252-3, N-Channel 600 V 6.2A (Tc) 74W (Tc) Surface Mount PG-TO252-3-1
Цена
233 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD06N60C3ATMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id
3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tape & Reel (TR)
Part Status
Not For New Designs
Current - Continuous Drain (Id) @ 25°C
6.2A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFSPD06N60C3ATMA1,SP001117770,2156-SPD06N60C3ATMA1
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SPD06N60
Power Dissipation (Max)
74W (Tc)
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