IRF3315SPBF International Rectifier
Артикул
IRF3315SPBF
Бренд
International Rectifier
Описание
HEXFET POWER MOSFET, N-Channel 150 V 21A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK
Цена
171 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF3315SPBF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Rds On (Max) @ Id, Vgs
82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 94W (Tc)
Drain to Source Voltage (Vdss)
150 V
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
REACH Status
REACH Unaffected
Supplier Device Package
D2PAK
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
INFIRFIRF3315SPBF,2156-IRF3315SPBF
Standard Package
1
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)
10V
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