IRF7832PBF International Rectifier
Артикул
IRF7832PBF
Бренд
International Rectifier
Описание
HEXFET POWER MOSFET, N-Channel 30 V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO
Цена
64 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7832PBF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.32V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 15 V
REACH Status
REACH Unaffected
Supplier Device Package
8-SO
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Surface Mount
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRF7832PBF,INFIRFIRF7832PBF
Standard Package
1
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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