IRFH4210DTRPBF International Rectifier
Артикул
IRFH4210DTRPBF
Бренд
International Rectifier
Описание
HEXFET POWER MOSFET, N-Channel 25 V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
Цена
167 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH4210DTRPBF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
44A (Ta)
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss)
25 V
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4812 pF @ 13 V
REACH Status
REACH Unaffected
Supplier Device Package
PQFN (5x6)
Package / Case
8-PowerTDFN
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
IRFH4210
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
2156-IRFH4210DTRPBF,IFEIRFIRFH4210DTRPBF
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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