IRFL024NPBF International Rectifier
Артикул
IRFL024NPBF
Бренд
International Rectifier
Описание
HEXFET POWER MOSFET, N-Channel 55 V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
Цена
50 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFL024NPBF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)
Rds On (Max) @ Id, Vgs
75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Drain to Source Voltage (Vdss)
55 V
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
REACH Status
REACH Affected
Supplier Device Package
SOT-223
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
IFEIRFIRFL024NPBF,2156-IRFL024NPBF
Standard Package
1
Package / Case
TO-261-4, TO-261AA
Drive Voltage (Max Rds On, Min Rds On)
10V
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