IRFR825PBF International Rectifier
Артикул
IRFR825PBF
Бренд
International Rectifier
Описание
HEXFET N-CHANNEL POWER MOSFET, N-Channel 500 V 6A (Tc) 119W (Tc) Surface Mount D-Pak
Цена
98 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR825PBF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
1.3Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Drain to Source Voltage (Vdss)
500 V
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1346 pF @ 25 V
REACH Status
REACH Affected
Supplier Device Package
D-Pak
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
INFIRFIRFR825PBF,2156-IRFR825PBF
Standard Package
1
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
10V
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