IRL2203NPBF International Rectifier
Артикул
IRL2203NPBF
Бренд
International Rectifier
Описание
HEXFET POWER MOSFET, N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB
Цена
98 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL2203NPBF.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±16V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
REACH Status
REACH Unaffected
Supplier Device Package
TO-220AB
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Other Names
INFINFIRL2203NPBF,2156-IRL2203NPBF
Standard Package
1
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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