IXER35N120D1 IXYS
Артикул
IXER35N120D1
Бренд
IXYS
Описание
IGBT 1200V 50A 200W TO247, IGBT NPT 1200 V 50 A 200 W Through Hole ISOPLUS247™
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IXER35N120D1.jpg
Power - Max
200 W
Test Condition
600V, 35A, 39Ohm, 15V
Input Type
Standard
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Reverse Recovery Time (trr)
80 ns
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 35A
Switching Energy
5.4mJ (on), 2.6mJ (off)
Gate Charge
150 nC
Supplier Device Package
ISOPLUS247™
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
-
Package
Bulk
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Other Names
IXER35N120D1-NDR,Q1370333
Td (on/off) @ 25°C
-
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