IXFH12N90 IXYS
Артикул
IXFH12N90
Бренд
IXYS
Описание
MOSFET N-CH 900V 12A TO247AD, N-Channel 900 V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFH12N90.jpg
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
HiPerFET™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFH12
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Other Names
IXFH12N90-NDR
Power Dissipation (Max)
300W (Tc)
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