IXFH18N100Q3 IXYS
Артикул
IXFH18N100Q3
Бренд
IXYS
Описание
MOSFET N-CH 1000V 18A TO247AD, N-Channel 1000 V 18A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)
Цена
3 588 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFH18N100Q3.jpg
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4890 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
HiPerFET™, Q3 Class
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFH18
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
830W (Tc)
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