IXFH52N30Q IXYS
Артикул
IXFH52N30Q
Бренд
IXYS
Описание
MOSFET N-CH 300V 52A TO247AD, N-Channel 300 V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFH52N30Q.jpg
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
300 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Other Names
IXFH52N30Q-NDR
Series
HiPerFET™, Q Class
Package
Tube
Part Status
Not For New Designs
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFH52
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
360W (Tc)
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