IXFH58N20 IXYS
Артикул
IXFH58N20
Бренд
IXYS
Описание
MOSFET N-CH 200V 58A TO247AD, N-Channel 200 V 58A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Цена
1 318 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFH58N20.jpg
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Other Names
IXFH58N20-NDR
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFH58
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
300W (Tc)
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