IXFH6N100F IXYS
Артикул
IXFH6N100F
Бренд
IXYS
Описание
MOSFET N-CH 1000V 6A TO247, N-Channel 1000 V 6A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFH6N100F.jpg
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXFH)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
California Prop 65
Warning Information
Series
HiPerFET™, F Class
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFH6
RoHS Status
ROHS3 Compliant
Power Dissipation (Max)
180W (Tc)
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