IXFK27N80 IXYS
Артикул
IXFK27N80
Бренд
IXYS
Описание
MOSFET N-CH 800V 27A TO264AA, N-Channel 800 V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFK27N80.jpg
Supplier Device Package
TO-264AA (IXFK)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9740 pF @ 25 V
FET Feature
-
Package / Case
TO-264-3, TO-264AA
REACH Status
REACH Unaffected
Series
HiPerFET™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFK27
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
25
Other Names
IXFK27N80-NDR
Power Dissipation (Max)
500W (Tc)
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