IXFM15N60 IXYS
Артикул
IXFM15N60
Бренд
IXYS
Описание
MOSFET N-CH 600V 15A TO204AE, N-Channel 600 V 15A (Tc) 300W (Tc) Through Hole TO-204AE
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
HiPerFET™
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Supplier Device Package
TO-204AE
Package / Case
TO-204AE
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
20
REACH Status
REACH Unaffected
Power Dissipation (Max)
300W (Tc)
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