IXFN110N85X IXYS
Артикул
IXFN110N85X
Бренд
IXYS
Описание
MOSFET N-CH 850V 110A SOT227B, N-Channel 850 V 110A (Tc) 1170W (Tc) Chassis Mount SOT-227B
Цена
10 966 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN110N85X.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
850 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
33mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
425 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
17000 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Series
HiPerFET™, Ultra X
Package
Tube
Part Status
Active
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFN110
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Power Dissipation (Max)
1170W (Tc)
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