IXFN120N20 IXYS
Артикул
IXFN120N20
Бренд
IXYS
Описание
MOSFET N-CH 200V 120A SOT-227B, N-Channel 200 V 120A (Tc) 600W (Tc) Chassis Mount SOT-227B
Цена
4 637 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN120N20.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
17mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9100 pF @ 25 V
FET Feature
-
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Other Names
IXFN120N20-NDR
Power Dissipation (Max)
600W (Tc)
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