IXFN120N65X2 IXYS
Артикул
IXFN120N65X2
Бренд
IXYS
Описание
MOSFET N-CH 650V 108A SOT227B, N-Channel 650 V 108A (Tc) 890W (Tc) Chassis Mount SOT-227B
Цена
7 113 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN120N65X2.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
108A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 54A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
225 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
15500 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Other Names
632519,IXFN120N65X2X-ND,IXFN120N65X2X
Series
HiPerFET™, Ultra X2
Package
Tube
Part Status
Active
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFN120
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Power Dissipation (Max)
890W (Tc)
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