IXFN21N100Q IXYS
Артикул
IXFN21N100Q
Бренд
IXYS
Описание
MOSFET N-CH 1000V 21A SOT-227B, N-Channel 1000 V 21A (Tc) 520W (Tc) Chassis Mount SOT-227B
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN21N100Q.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5900 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Series
HiPerFET™, Q Class
Package
Tube
Part Status
Active
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFN21
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Power Dissipation (Max)
520W (Tc)
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