IXFN26N90 IXYS
Артикул
IXFN26N90
Бренд
IXYS
Описание
MOSFET N-CH 900V 26A SOT-227B, N-Channel 900 V 26A (Tc) 600W (Tc) Chassis Mount SOT-227B
Цена
5 141 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN26N90.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10800 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Other Names
IXFN26N90-NDR
Power Dissipation (Max)
600W (Tc)
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