IXFN27N80 IXYS
Артикул
IXFN27N80
Бренд
IXYS
Описание
MOSFET N-CH 800V 27A SOT-227B, N-Channel 800 V 27A (Tc) 520W (Tc) Chassis Mount SOT-227B
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN27N80.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V, 15V
Rds On (Max) @ Id, Vgs
300mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9740 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Other Names
468185,IXFN27N80-NDR,Q1653251
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFN27
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Power Dissipation (Max)
520W (Tc)
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