IXFN50N120SIC IXYS
Артикул
IXFN50N120SIC
Бренд
IXYS
Описание
SICFET N-CH 1200V 47A SOT227B, N-Channel 1200 V 47A (Tc) - Chassis Mount SOT-227B
Цена
13 970 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN50N120SIC.jpg
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 1000 V
FET Feature
-
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Series
-
Package
Tube
Part Status
Active
Mounting Type
Chassis Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IXFN50
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
1
REACH Status
REACH Unaffected
Power Dissipation (Max)
-
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