IXFT23N60Q IXYS
Артикул
IXFT23N60Q
Бренд
IXYS
Описание
MOSFET N-CH 600V 23A TO268, N-Channel 600 V 23A (Tc) 400W (Tc) Surface Mount TO-268AA
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFT23N60Q.jpg
Supplier Device Package
TO-268AA
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 25 V
FET Feature
-
Package / Case
TO-268-3, D?Pak (2 Leads + Tab), TO-268AA
REACH Status
REACH Unaffected
Series
HiPerFET™, Q Class
Package
Bulk
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFT23
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
1
Power Dissipation (Max)
400W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут