IXFT30N85XHV IXYS
Артикул
IXFT30N85XHV
Бренд
IXYS
Описание
MOSFET N-CH 850V 30A TO268, N-Channel 850 V 30A (Tc) 695W (Tc) Surface Mount TO-268 (IXFT)
Цена
2 380 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFT30N85XHV.jpg
Supplier Device Package
TO-268 (IXFT)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
850 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
220mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2460 pF @ 25 V
FET Feature
-
Package / Case
TO-268-3, D?Pak (2 Leads + Tab), TO-268AA
REACH Status
REACH Unaffected
Series
HiPerFET™, Ultra X
Package
Tube
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFT30
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Other Names
238-IXFT30N85XHV,-1402-IXFT30N85XHV,IXFT30N85XHV-ND
Power Dissipation (Max)
695W (Tc)
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