IXFX200N10P IXYS
Артикул
IXFX200N10P
Бренд
IXYS
Описание
MOSFET N-CH 100V 200A PLUS247-3, N-Channel 100 V 200A (Tc) 830W (Tc) Through Hole PLUS247™-3
Цена
2 536 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFX200N10P.jpg
Supplier Device Package
PLUS247™-3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7600 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
HiPerFET™, Polar
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IXFX200
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
830W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут