IXFX34N80 IXYS
Артикул
IXFX34N80
Бренд
IXYS
Описание
MOSFET N-CH 800V 34A PLUS247, N-Channel 800 V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3
Цена
3 532 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFX34N80.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
240mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7500 pF @ 25 V
FET Feature
-
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Other Names
IXFX34N80-NDR
Power Dissipation (Max)
560W (Tc)
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