IXFX55N50 IXYS
Артикул
IXFX55N50
Бренд
IXYS
Описание
MOSFET N-CH 500V 55A PLUS247-3, N-Channel 500 V 55A (Tc) 625W (Tc) Through Hole PLUS247™-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFX55N50.jpg
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
500 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
330 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
FET Feature
-
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3
Series
HiPerFET™
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Other Names
IXFX55N50-NDR
REACH Status
REACH Unaffected
Power Dissipation (Max)
625W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут