IXGQ50N60B4D1 IXYS
Артикул
IXGQ50N60B4D1
Бренд
IXYS
Описание
IGBT 600V 100A 300W TO3P, IGBT PT 600 V 100 A 300 W Through Hole TO-3P
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IXGQ50N60B4D1.jpg
Test Condition
400V, 36A, 10Ohm, 15V
Input Type
Standard
Current - Collector (Ic) (Max)
100 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Reverse Recovery Time (trr)
25 ns
IGBT Type
PT
Current - Collector Pulsed (Icm)
230 A
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 36A
Switching Energy
930µJ (on), 1mJ (off)
Gate Charge
110 nC
Power - Max
300 W
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Series
-
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
REACH Status
REACH Unaffected
Td (on/off) @ 25°C
37ns/330ns
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