IXTA3N120 IXYS
Артикул
IXTA3N120
Бренд
IXYS
Описание
MOSFET N-CH 1200V 3A TO263, N-Channel 1200 V 3A (Tc) 200W (Tc) Surface Mount TO-263AA
Цена
1 424 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTA3N120.jpg
Supplier Device Package
TO-263AA
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
REACH Status
REACH Unaffected
Other Names
Q2023873,IXTA3N120-NDR
Series
-
Package
Tube
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTA3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
50
Power Dissipation (Max)
200W (Tc)
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