IXTH10N100D2 IXYS
Артикул
IXTH10N100D2
Бренд
IXYS
Описание
MOSFET N-CH 1000V 10A TO247, N-Channel 1000 V 10A (Tc) 695W (Tc) Through Hole TO-247 (IXTH)
Цена
2 963 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTH10N100D2.jpg
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5320 pF @ 25 V
FET Feature
Depletion Mode
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
Depletion
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTH10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
695W (Tc)
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