IXTH20N60 IXYS
Артикул
IXTH20N60
Бренд
IXYS
Описание
MOSFET N-CH 600V 20A TO247, N-Channel 600 V 20A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTH20N60.jpg
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Other Names
IXTH20N60-NDR,Q3228128
Series
MegaMOS™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTH20
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
300W (Tc)
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