IXTN30N100L IXYS
Артикул
IXTN30N100L
Бренд
IXYS
Описание
MOSFET N-CH 1000V 30A SOT227B, N-Channel 1000 V 30A (Tc) 800W (Tc) Chassis Mount SOT-227B
Цена
11 959 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTN30N100L.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
450mOhm @ 15A, 20V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
545 nC @ 20 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
13700 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Other Names
Q3424174
Series
Linear
Package
Bulk
Part Status
Active
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTN30
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Power Dissipation (Max)
800W (Tc)
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