IXTP120P065T IXYS
Артикул
IXTP120P065T
Бренд
IXYS
Описание
MOSFET P-CH 65V 120A TO220AB, P-Channel 65 V 120A (Tc) 298W (Tc) Through Hole TO-220-3
Цена
1 188 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTP120P065T.jpg
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
65 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
13200 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
REACH Status
REACH Unaffected
Series
TrenchP™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTP120
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
50
Power Dissipation (Max)
298W (Tc)
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