IXTP3N120 IXYS
Артикул
IXTP3N120
Бренд
IXYS
Описание
MOSFET N-CH 1200V 3A TO220AB, N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3
Цена
1 424 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTP3N120.jpg
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
REACH Status
REACH Unaffected
Other Names
IXTP3N120-NDR
Series
HiPerFET™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTP3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
50
Power Dissipation (Max)
200W (Tc)
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