IXTQ200N06P IXYS
Артикул
IXTQ200N06P
Бренд
IXYS
Описание
MOSFET N-CH 60V 200A TO3P, N-Channel 60 V 200A (Tc) 714W (Tc) Through Hole TO-3P
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTQ200N06P.jpg
Supplier Device Package
TO-3P
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5mOhm @ 400A, 15V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5400 pF @ 25 V
FET Feature
-
Package / Case
TO-3P-3, SC-65-3
REACH Status
REACH Unaffected
Series
Polar
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IXTQ200
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
714W (Tc)
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