IXTQ86N25T IXYS
Артикул
IXTQ86N25T
Бренд
IXYS
Описание
MOSFET N-CH 250V 86A TO3P, N-Channel 250 V 86A (Tc) 540W (Ta) Through Hole TO-3P
Цена
1 094 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
Trench
Power Dissipation (Max)
540W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Rds On (Max) @ Id, Vgs
37mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5330 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Technology
MOSFET (Metal Oxide)
Other Names
238-IXTQ86N25T
REACH Status
REACH Unaffected
Package
Tube
Part Status
Active
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
IXTQ86
Vgs (Max)
±30V
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