IXTU01N100 IXYS
Артикул
IXTU01N100
Бренд
IXYS
Описание
MOSFET N-CH 1000V 100MA TO251, N-Channel 1000 V 100mA (Tc) 25W (Tc) Through Hole TO-251AA
Цена
439 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTU01N100.jpg
Supplier Device Package
TO-251AA
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
100mA (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
6.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
54 pF @ 25 V
FET Feature
-
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
REACH Status
REACH Unaffected
Series
-
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTU01
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
70
Other Names
IXTU01N100-NDR,Q1225942
Power Dissipation (Max)
25W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут