IXTV200N10T IXYS
Артикул
IXTV200N10T
Бренд
IXYS
Описание
MOSFET N-CH 100V 200A PLUS220, N-Channel 100 V 200A (Tc) 550W (Tc) Through Hole PLUS220
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTV200N10T.jpg
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9400 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PLUS220
Package / Case
TO-220-3, Short Tab
Series
TrenchMV™
Package
Tube
Part Status
Obsolete
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
REACH Status
REACH Unaffected
Power Dissipation (Max)
550W (Tc)
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