IXTY02N120P IXYS
Артикул
IXTY02N120P
Бренд
IXYS
Описание
MOSFET N-CH 1200V 200MA TO252, N-Channel 1200 V 200mA (Tc) 33W (Tc) Surface Mount TO-252AA
Цена
412 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTY02N120P.jpg
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
104 pF @ 25 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
REACH Status
REACH Unaffected
Series
Polar
Package
Tube
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTY02
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
70
Other Names
IXTY02N120P-CRL,Q14232739
Power Dissipation (Max)
33W (Tc)
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