IXXX200N65B4 IXYS
Артикул
IXXX200N65B4
Бренд
IXYS
Описание
IGBT 650V 370A 1150W PLUS247, IGBT PT 650 V 370 A 1150 W Through Hole PLUS247™-3
Цена
3 767 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IXXX200N65B4.jpg
Supplier Device Package
PLUS247™-3
Power - Max
1150 W
Test Condition
400V, 100A, 1Ohm, 15V
Input Type
Standard
Current - Collector (Ic) (Max)
370 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
PT
Current - Collector Pulsed (Icm)
1000 A
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 160A
Switching Energy
4.4mJ (on), 2.2mJ (off)
Gate Charge
553 nC
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Standard Package
30
Series
GenX4™, XPT™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IXXX200
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Td (on/off) @ 25°C
62ns/245ns
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