2N7000-G Microchip Technology
Артикул
2N7000-G
Бренд
Microchip Technology
Описание
MOSFET N-CH 60V 200MA TO92-3, N-Channel 60 V 200mA (Tj) 1W (Tc) Through Hole TO-92-3
Цена
81 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/2N7000-G.jpg
Standard Package
1,000
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
HTSUS
8541.29.0095
ECCN
EAR99
Series
-
Package
Bag
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
2N7000
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Power Dissipation (Max)
1W (Tc)
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