APT11N80BC3G Microchip Technology
Артикул
APT11N80BC3G
Бренд
Microchip Technology
Описание
MOSFET N-CH 800V 11A TO247, N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole TO-247 [B]
Цена
799 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT11N80BC3G.jpg
Other Names
APT11N80BC3GMI,APT11N80BC3GMI-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
156W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
REACH Status
REACH Unaffected
Base Product Number
APT11N80
Series
-
Package
Tube
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247 [B]
Vgs (Max)
±20V
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