APT18M100B Microchip Technology
Артикул
APT18M100B
Бренд
Microchip Technology
Описание
MOSFET N-CH 1000V 18A TO247, N-Channel 1000 V 18A (Tc) 625W (Tc) Through Hole TO-247 [B]
Цена
1 702 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT18M100B.jpg
Other Names
APT18M100BMI,APT18M100BMI-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
625W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
700mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4845 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
REACH Status
REACH Unaffected
Base Product Number
APT18M100
Series
-
Package
Tube
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247 [B]
Vgs (Max)
±30V
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