APT25GP90BDQ1G Microchip Technology
Артикул
APT25GP90BDQ1G
Бренд
Microchip Technology
Описание
IGBT 900V 72A 417W TO247, IGBT PT 900 V 72 A 417 W Through Hole TO-247 [B]
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/APT25GP90BDQ1G.jpg
Other Names
APT25GP90BDQ1GMI,APT25GP90BDQ1GMI-ND
Power - Max
417 W
Voltage - Collector Emitter Breakdown (Max)
900 V
Current - Collector (Ic) (Max)
72 A
IGBT Type
PT
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 25A
Current - Collector Pulsed (Icm)
110 A
Switching Energy
370µJ (off)
Input Type
Standard
Gate Charge
110 nC
Td (on/off) @ 25°C
13ns/55ns
REACH Status
REACH Unaffected
Base Product Number
APT25GP90
Supplier Device Package
TO-247 [B]
Series
POWER MOS 7®
Package
Tube
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Test Condition
600V, 40A, 4.3Ohm, 15V
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