APT33GF120B2RDQ2G Microchip Technology
Артикул
APT33GF120B2RDQ2G
Бренд
Microchip Technology
Описание
IGBT 1200V 64A 357W TMAX, IGBT NPT 1200 V 64 A 357 W Through Hole
Цена
3 133 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/APT33GF120B2RDQ2G.jpg
Other Names
APT33GF120B2RDQ2GMI-ND,APT33GF120B2RDQ2GMI
Power - Max
357 W
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
64 A
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 25A
Current - Collector Pulsed (Icm)
75 A
Switching Energy
1.315mJ (on), 1.515mJ (off)
Input Type
Standard
Gate Charge
170 nC
Td (on/off) @ 25°C
14ns/185ns
REACH Status
REACH Unaffected
Base Product Number
APT33GF120
Series
-
Package
Tube
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3 Variant
Test Condition
800V, 25A, 4.3Ohm, 15V
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