APT37M100B2 Microchip Technology
Артикул
APT37M100B2
Бренд
Microchip Technology
Описание
MOSFET N-CH 1000V 37A T-MAX, N-Channel 1000 V 37A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
Цена
3 989 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT37M100B2.jpg
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
330mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
305 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9835 pF @ 25 V
FET Feature
-
Standard Package
1
Other Names
APT37M100B2MI,APT37M100B2MI-ND
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3 Variant
Supplier Device Package
T-MAX™ [B2]
Base Product Number
APT37M100
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
1135W (Tc)
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