APT4F120K Microchip Technology
Артикул
APT4F120K
Бренд
Microchip Technology
Описание
MOSFET N-CH 1200V 4A TO220, N-Channel 1200 V 4A (Tc) 225W (Tc) Through Hole TO-220
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/APT4F120K.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
225W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
4.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1385 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
APT4F120KMI,APT4F120KMI-ND
REACH Status
REACH Unaffected
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220
Vgs (Max)
±30V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут