APT75GP120B2G Microchip Technology
Артикул
APT75GP120B2G
Бренд
Microchip Technology
Описание
IGBT 1200V 100A 1042W TMAX, IGBT PT 1200 V 100 A 1042 W Through Hole
Цена
4 659 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/APT75GP120B2G.jpg
Other Names
APT75GP120B2GMI-ND,APT75GP120B2GMI
Power - Max
1042 W
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
100 A
IGBT Type
PT
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 75A
Current - Collector Pulsed (Icm)
300 A
Switching Energy
1620µJ (on), 2500µJ (off)
Input Type
Standard
Gate Charge
320 nC
Td (on/off) @ 25°C
20ns/163ns
REACH Status
REACH Unaffected
Base Product Number
APT75GP120
Series
POWER MOS 7®
Package
Tube
Part Status
Active
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3 Variant
Test Condition
600V, 75A, 5Ohm, 15V
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